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MRFIC0913

MOTOROLA RF DEVICE DATA

The MRFIC Line

900 MHz GaAs Integrated

Power Amplifier

This integrated circuit is intended for GSM class IV handsets. The device is

specified for 2.8 watts output power and 48% minimum power added efficiency

under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior

performance, Motorola’s planar GaAs MESFET process is employed. The

device is packaged in the PFP–16 Power Flat Package which gives excellent

thermal performance through a solderable backside contact.

• Usable Frequency Range 800 to 1000 MHz

• Typical Output Power:

36.0 dBm @ 5.8 Volts

35.0 dBm @ 4.8 Volts

31.5 dBm @ 3.6 Volts

• 48% Minimum Power Added Efficiency

• Low Parasitic, High Thermal Dissipation Package

• Order MRFIC0913R2 for Tape and Reel Option.

R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

• Device Marking = M0913

Rating

Symbol

Value

Unit

Supply Voltage

VD1, VD2

9

Vdc

RF Input Power

Pin

15

dBm

Gate Voltage

VSS

–6

Vdc

Ambient Operating Temperature

TA

–40 to + 85

°C

Storage Temperature

Tstg

– 65 to +150

°C

Thermal Resistance, Junction to Case

R

θJC

10

°C/W

Pin Connections and Functional Block Diagram

RF IN

1

2

3

4

7

6

5

GND

8

9

10

11

12

13

14

15

16

VG1

RF OUT

RF OUT

VD1

VD2

GND

GND

N/C

N/C

VSS

VG2

GND

GND

GND

Order this document

by MRFIC0913/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1996

MRFIC0913

900 MHz

GSM CELLULAR

INTEGRATED POWER AMPLIFIER

GaAs MONOLITHIC

INTEGRATED CIRCUIT

CASE 978–02

(PFP–16)

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