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VNV10N07 Datasheet(PDF) 3 Page - STMicroelectronics |
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VNV10N07 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page  ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs ( ∗) Forward Transconductance VDS = 13 V ID = 5 A 6 8 S Coss Output Capacitance VDS = 13 V f = 1 MHz Vin = 0 350 500 pF SWITCHING (**) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 15 V Id = 5 A Vgen = 10 V Rgen = 10 Ω (see figure 3) 50 80 230 100 100 160 400 180 ns ns ns ns td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 15 V Id = 5 A Vgen = 10 V Rgen = 1000 Ω (see figure 3) 600 0.9 3.8 1.7 900 2 6 2.5 ns µs µs µs (di/dt)on Turn-on Current Slope VDD = 15 V ID = 5 A Vin = 10 V Rgen = 10 Ω 60 A/ µs Qi Total Input Charge VDD = 12 V ID = 5 A Vin = 10 V 30 nC SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD ( ∗) Forward On Voltage ISD = 5 A Vin = 0 1.6 V trr ( ∗∗) Qrr ( ∗∗) IRRM ( ∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A di/dt = 100 A/ µs VDD = 30 V Tj = 25 oC (see test circuit, figure 5) 125 0.3 4.8 ns µC A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit Ilim Drain Current Limit Vin = 10 V VDS = 13 V Vin = 5 V VDS = 13 V 7 7 10 10 14 14 A A tdlim ( ∗∗) Step Response Current Limit Vin = 10 V Vin = 5 V 20 50 30 80 µs µs Tjsh ( ∗∗) Overtemperature Shutdown 150 oC Tjrs ( ∗∗) Overtemperature Reset 135 oC Igf ( ∗∗) Fault Sink Current Vin = 10 V VDS = 13 V Vin = 5 V VDS = 13 V 50 20 mA mA Eas ( ∗∗) Single Pulse Avalanche Energy starting Tj = 25 oC VDD = 20 V Vin = 10 V Rgen = 1 K Ω L = 10 mH 0.4 J ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ∗∗) Parameters guaranteed by design/characterization VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 3/14 |
Similar Part No. - VNV10N07 |
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Similar Description - VNV10N07 |
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