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KSH122-I Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # KSH122-I
Description  D-PAK for Surface Mount Applications
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSH122-I Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
120
mA
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
100
V
ICEO
Collector Cut-off Current
VCE = 50V, IB =0
10
µA
ICBO
Collector Cut-off Current
VCB = 100V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2
mA
hFE
*DC Current Gain
VCE = 4V, IC = 4A
VCE = 4V, VEB = 8A
1000
100
12K
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 4A, IB = 16mA
IC = 8A, IB = 80mA
2
4
V
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 8A, IB = 80mA
4.5
V
VBE(on)
*Base-Emitter On Voltage
VCE = 4V, IC = 4A
2.8
V
Cob
Output Capacitance
VCB = 10V, IE = 0
f= 0.1MHz
200
pF
KSH122
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
Equivalent Circuit
B
E
C
R1
R2
R18k
R20.12k
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11


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