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KSK596 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSK596 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 Si N-channel Junction FET Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted IDSS Classification Symbol Parameter Ratings Units VGDO Gate-Drain Voltage -20 V IG Gate Current 10 mA ID Drain Current 1 mA PD Power Dissipation 100 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVGDO Gate-Drain Breakdown Voltage IG= -100uA -20 V VGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA -0.6 -1.5 V IDSS Drain Current VDS=5V, VGS=0 100 350 µA lYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 1.2 ms Ciss Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pF Crss Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF Classification A B C IDSS(µA) 100 ~ 170 150 ~ 240 210 ~ 350 KSK596 Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 1.Source 2. Gate 3. Drain TO-92S 1 |
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