2N6487 datasheet(2/6 Pages) ONSEMI

Part #	2N6487

Description	Complementary Silicon Plastic Power Transistors 60??0 VOLTS, 75 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

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2

80

40

20

0

20

40

80

100

120

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

60

TA

TC

4.0

2.0

1.0

3.0

0

60

140

TA

TC

0

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0)

2N6487, 2N6490

2N6488, 2N6491

VCEO(sus)

60

80

−

Vdc

Collector−Emitter Sustaining Voltage (Note)

(IC = 200 mAdc, VBE = 1.5 Vdc)

2N6487, 2N6490

2N6488, 2N6491

VCEX

70

90

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

2N6487, 2N6490

(VCE = 40 Vdc, IB = 0)

2N6488, 2N6491

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)

2N6487, 2N6490

(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)

2N6488, 2N6491

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6487, 2N6490

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6488, 2N6491

ICEX

−

500

5.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 5.0 Adc, VCE = 4.0 Vdc)

(IC = 15 Adc, VCE = 4.0 Vdc)

hFE

20

5.0

150

−

Collector−Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.5 Adc)

(IC = 15 Adc, IB = 5.0 Adc)

VCE(sat)

−

1.3

3.5

Vdc

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 4.0 Vdc)

(IC = 15 Adc, VCE = 4.0 Vdc)

VBE(on)

−

1.3

3.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

fT

5.0

−

MHz

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

25

−

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • ftest

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