BC489G datasheet(4/6 Pages) ONSEMI

Part #	BC489G

Description	High Current Transistors NPN Silicon These are Pb?묯ree Devices

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BC489, BC489A

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VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0 k

1.0

2.0

5.0

Figure 6. Active Region — Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

700

500

300

200

100

70

50

30

20

10

3.0

10

20

50

30

7.0

70 100

BC489

100 ms

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

100

80

60

40

TJ =125°C

25°C

−55°C

VCE = 1.0 V

300

500

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltages

1.0

0.8

0.6

0.4

0.2

0

0.5

1.0

200

20

TJ = 25°C

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

5.0

10

50

100

VBE(sat) @ IC/IB = 10

IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

1.0

0.8

0.6

0.4

0.2

0

0.1

10

1.0

TJ = 25°C

IC = 10 mA

0.05

0.2

0.5

2.0

5.0

20

100 mA

250 mA

50

mA

2.0

500

50

500 mA

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