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MTDN8233X6 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTDN8233X6 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 8 page CYStech Electronics Corp. Spec. No. : C911X6 Issued Date : 2013.07.12 Revised Date : 2013.07.23 Page No. : 5/10 MTDN8233X6 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Pulsed Ta=25°C VDS=5V Gate Charge Characteristics 0 1 2 3 4 5 04 8 12 Total Gate Charge---Qg(nC) 16 ID=11A VDS=16V VDS=10V VDS=4V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 1s RDS(ON ) Limit TA=25°C, Tj(max)=150°C, VGS=4.5V, RθJA=80°C/W Single Pulse Maximum Drain Current vs Junction Temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=80°C/W |
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