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MTDN8233X6 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTDN8233X6
Description  Dual N -Channel Enhancement Mode MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTDN8233X6 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C911X6
Issued Date : 2013.07.12
Revised Date : 2013.07.23
Page No. : 5/10
MTDN8233X6
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250μA
ID=1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Pulsed
Ta=25°C
VDS=5V
Gate Charge Characteristics
0
1
2
3
4
5
04
8
12
Total Gate Charge---Qg(nC)
16
ID=11A
VDS=16V
VDS=10V
VDS=4V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
1s
RDS(ON
)
Limit
TA=25°C, Tj(max)=150°C,
VGS=4.5V, RθJA=80°C/W
Single Pulse
Maximum Drain Current vs Junction Temperature
0
2
4
6
8
10
12
14
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=10V, RθJA=80°C/W


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