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MRFE6VP61K25HR6 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRFE6VP61K25HR6 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 23 page 2 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Total Device Dissipation @ TC =25C Derate above 25C PD 1333 6.67 W W/C Operating Junction Temperature (1,2) TJ 225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz RJC 0.15 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle, IDQ = 100 mA, 230 MHz ZJC 0.03 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 3500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 4000 V Table 4. Electrical Characteristics (TA =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Gate--Source Leakage Current (VGS =5 Vdc, VDS =0 Vdc) IGSS — — 1 Adc Drain--Source Breakdown Voltage (VGS =0 Vdc, ID = 100 mA) V(BR)DSS 133 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS =50 Vdc, VGS =0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS =0 Vdc) IDSS — — 20 Adc On Characteristics Gate Threshold Voltage (4) (VDS =10 Vdc, ID = 1776 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.2 2.9 Vdc Drain--Source On--Voltage (4) (VGS =10 Vdc, ID =2 Adc) VDS(on) — 0.15 — Vdc Forward Transconductance (VDS =10 Vdc, ID =30 Adc) gfs — 28.0 — S Dynamic Characteristics (4) Reverse Transfer Capacitance (VDS =50 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Crss — 2.8 — pF Output Capacitance (VDS =50 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Coss — 185 — pF Input Capacitance (VDS =50 Vdc, VGS =0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 562 — pF 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) |
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