2

RF Device Data

Freescale Semiconductor, Inc.

MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +133

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Storage Temperature Range

-- 65 to +150

C

Case Operating Temperature

150

C

Derate above 25C

1333

6.67

W

W/C

225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.15

C/W

Thermal Impedance, Junction to Case

Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,

0.03

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 3500 V

Machine Model (per EIA/JESD22--A115)

B, passes 250 V

Charge Device Model (per JESD22--C101)

IV, passes 4000 V

Characteristic

Symbol

Min

Typ

Max

Unit

Gate--Source Leakage Current

—

—

1

Adc

Drain--Source Breakdown Voltage

133

—

—

Vdc

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

20

Adc

On Characteristics

1.7

2.2

2.7

Vdc

Gate Quiescent Voltage

1.9

2.2

2.9

Vdc

—

0.15

—

Vdc

Forward Transconductance

—

28.0

—

S

Reverse Transfer Capacitance

—

2.8

—

pF

Output Capacitance

—

185

—

pF

Input Capacitance

—

562

—

pF

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Each side of device measured separately.

(continued)