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KST43 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KST43 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: PW ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector Base Voltage : KST42 : KST43 300 200 V V VCEO Collector-Emitter Voltage : KST42 : KST43 300 200 V V VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C RTH(j-a) Thermal Resistance junction to Ambient 357 °C/W Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Emitter Breakdown Voltage : KST42 : KST43 IC=100µA, IE=0 300 200 V V BVCEO * Collector -Emitter Breakdown Voltage : KST42 : KST43 IC=1mA, IB=0 300 200 V V BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V ICBO Collector Cut-off Current VCB=200V, IE=0 0.1 µA IEBO Emitter Cut-off Current VCB=5V, IC=0 0.1 µA hFE * DC Current Gain VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA 25 40 40 VCE (sat) * Collector-Emitter Saturation Voltage IC=20mA, IB=2mA 0.5 V VBE (sat) * Base-Emitter Saturation Voltage IC=20mA, IB=2mA 0.9 V Cob Output Capacitance : KST42 : KST43 VCB=20V, IE=0 f=1MHz 3 4 pF pF fT Current Gain Bandwidth Product VCE=20V, IC=10mA f=100MHz 50 MHz KST42/43 High Voltage Transistor 1. Base 2. Emitter 3. Collector SOT-23 1 2 3 |
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Similar Description - KST43 |
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