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ATC100B102KT50XT Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc |
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ATC100B102KT50XT Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 23 page 6 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TYPICAL CHARACTERISTICS 50 10 2000 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage 30 Ciss 1000 100 40 Coss Measured with 30 mV(rms)ac @ 1 MHz VGS =0 Vdc Note: Each side of device measured separately. 1 59 66 35 Pin, INPUT POWER (dBm) PEAK Figure 5. Output Power versus Input Power 64 36 37 38 39 40 41 42 63 60 Actual Ideal VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle P1dB = 61.3 dBm (1333 W) 62 61 65 P3dB = 61.9 dBm (1553 W) P2dB = 61.7 dBm (1472 W) 26 30 90 100 24 70 50 Pout, OUTPUT POWER (WATTS) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power 22 20 2000 21 40 60 80 23 25 16 23 0 20 19 Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain versus Output Power 200 18 1400 1600 17 400 800 1000 1200 VDD =30 V 50 V 21 22 25 24 26 600 35 V 40 V 45 V 20 90 0 Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Drain Efficiency versus Output Power 70 200 400 600 800 1000 1200 1400 60 30 50 40 80 1600 Figure 9. Power Gain and Drain Efficiency versus Output Power Pout, OUTPUT POWER (WATTS) PEAK 19 21 20 100 2000 D 25_C TC =--30_C 85_C Gps 40 60 50 20 30 --30_C 25_C 85_C VDD =30 V 50 V 35 V 40 V 45 V 24 23 22 26 25 70 80 90 Crss 1000 D Gps VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 2000 1000 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle |
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