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ATC100B102KT50XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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ATC100B102KT50XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 23 page MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 1 RF Device Data Freescale Semiconductor, Inc. RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD =50 Volts,IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) 1250 Peak 230 24.0 74.0 CW 1250 CW 230 22.9 74.6 Application Circuits (1) — Typical Performance Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 27 CW 1300 27 81 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 352 Pulse (200 sec, 20% Duty Cycle) 1250 21.5 66 352 CW 1150 20.5 68 500 CW 1000 18 58 1. Contact your local Freescale sales office for additional information on specific circuit designs. Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage Result 230 Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 1500 Peak (3 dB Overdrive) 50 No Device Degradation Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 VDD Operation Characterized from 30 V to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. Document Number: MRFE6VP61K25H Rev. 4, 3/2013 Freescale Semiconductor Technical Data 1.8--600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 (Top View) Drain A 31 Figure 1. Pin Connections 42 Drain B Gate A Gate B NI--1230--4H MRFE6VP61K25HR6 NI--1230--4S MRFE6VP61K25HSR5 Note: The backside of the package is the source terminal for the transistor. NI--1230--4S GULL MRFE6VP61K25GSR5 Freescale Semiconductor, Inc., 2010--2013. All rights reserved. |
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