KST5179 datasheet(1/3 Pages) FAIRCHILD

Part #	KST5179

Description	RF Amplifier Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Rev. A2, November 2002

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

a=25°C unless otherwise noted

Electrical Characteristics T

a=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

2.5

V

IC

Collector Current

50

mA

PC

Collector Power Dissipation (Ta=25°C)

350

mW

Derate above 25

°C2.8

mW/

°C

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=0.01mA, IE=0

20

V

BVCEO

Collector-Emitter Breakdown Voltage

IC=3mA, IB=0

12

V

BVEBO

Emitter Base Breakdown Voltage

IE=0.01mA, IC=0

2.5

V

ICBO

Collector Cut-off Current

VCB=15V, IE=0

0.02

µA

hFE

DC Current Gain

VCE=1V, IC=3mA

25

VCE (sat)

Collector-Emitter Saturation Voltage

IC=10mA, IB=1mA

0.4

V

VBE (sat)

Base-Emitter Saturation Voltage

IC=10mA, IB=1mA

1

V

fT

Current Gain Bandwidth Product

VCE=6V, IC=5mA, f=100MHz

900

MHz

Cob

Output Capacitance

VCB=10V, IE=0, f=0.1MHz to 1MHz

1

pF

hfe

Small Signal Current Gain

VCE=6V, IC=2mA, f=1KHz

25

NF

Noise Figure

VCE=6V, IC=1.5mA, f=200MHz

RS=50Ω

4.5

dB

GPE

Power Gain

VCE=6V, IC=5mA, f=200MHz

15

dB

KST5179

RF Amplifier Transistor

7H

Marking

1. Base 2. Emitter 3. Collector

SOT-23

1

2

3

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