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UPD166013T1J-E1-AY Datasheet(PDF) 3 Page - Renesas Technology Corp |
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UPD166013T1J-E1-AY Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 28 page  PD166013T1J Preliminary R07DS0852EJ0100 Rev.1.00 Page 3 of 26 Aug 20, 2012 3.3 Absolute Maximum Ratings (TA = 25°C, unless otherwise specified) Parameter Symbol Rating Unit Test Conditions VCC voltage VCC1 28 V VCC voltage at reverse battery condition VCC2 –16 V At nominal load current. VCC voltage for full short circuit protection VCC3 28 V VCC voltage under load dump condition VCC4 40 V RI = 1 , RL = 6.8 , RIS = 2 k, td = 400 ms Load current IL Self limited A Total power dissipation for whole device (DC) PD 2.0 W TA = 85°C, Device on 50 mm 50 mm 1.5 mm epoxy PCB FR4 with 6 cm 2 of 70 m copper area –0.5 to 10 VCC = 9 V to 16 V Voltage at IN pin VIN VCC2 to 0 V RIN = 2 k, At reverse battery condition, t < 2 min. –0.5 to 10 VCC = 9 V to 16 V Voltage at SEN pin VSEN VCC2 to 0 V RSEN = 2 k, At reverse battery condition, t < 2 min. –0.5 to VCC + 0.5 VCC = 9 V to 16 V Voltage at IS pin VIS VCC2 to 0 V RIS = 2 k, At reverse battery condition, t < 2 min. Inductive load switch-off energy dissipation single pulse EAS 17 mJ VCC = 13.5 V, IL = 2.0 A, Tch,start < 150°C Maximum allowable energy under short circuit condition EAS(SC) 40 mJ VCC = 18 V, Tch,start < 150°C, Rsupply = 10 m, Rshort = 50 m Lsupply = 5 H, Lshort = 15 H Channel temperature Tch –40 to +150 °C Dynamic temperature increase while switching T ch 60 °C Storage temperature Tstg –55 to +150 °C 2000 V HBM AEC-Q100-002 std. R = 1.5 k , C = 100 pF ESD susceptibility VESD 200 V MM AEC-Q100-003 std. R = 0 , C = 200 pF Note: All voltages refer to ground pin of the device. 3.4 Thermal Characteristics Parameter Symbol MIN. TYP. MAX. Unit Test Conditions Rth(ch-a) — 30 — °C/W All channel Thermal characteristics Rth(ch-c) — 2.4 — °C/W All channel Device on 50 mm 50 mm 1.5 mm epoxy PCB FR4 with 6 cm 2 of 70 m copper area |
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