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UPD166019T1F-E1-AY Datasheet(PDF) 9 Page - Renesas Technology Corp |
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UPD166019T1F-E1-AY Datasheet(HTML) 9 Page - Renesas Technology Corp |
9 / 18 page PD166019T1F Preliminary R07DS0730EJ0100 Rev.1.00 Page 9 of 16 Apr 25, 2012 Device Behavior at Low Voltage Condition If the supply voltage, VCC goes down under VCIN(UV), The device shuts down the output. If the supply voltage, VCC increase over VCIN(ST), the device turns on the output automatically. The device keeps off-state if supply voltage, VCC does not increase over VCIN(ST) after under voltage shutdown. VIN 0 0 VOUT/VCC VBAT VOUT VCC VCIN(UV) VCIN(ST) IL t Loss of Ground Protection In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off-state by low voltage detector. In loss of ground condition voltage of internal circuit is as below. Thus RIN should be bigger than 40 k to activate this function. Internal circuit voltage = VCC – Ion (RIN + 100 ) – Vf Low voltage detection voltage: VCIN(UV) Even though there is possibility to keep on state if RIN is lower than 40 k, output MOSFET is secured in full on state by circuit design. VCC VCC IN GND Internal Circuit Ion Ion: Circuit current, 300 μA min 100 Ω RIN Low Voltage Detector |
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