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NID5003NT4G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NID5003NT4G
Description  Self-Protected FET with Temperature and Current Limit
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NID5003NT4G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2008
September, 2008− Rev. 6
1
Publication Order Number:
NID5003N/D
NID5003N
Preferred Device
Self-Protected FET
with Temperature and
Current Limit
42 V, 20 A, Single N−Channel, DPAK
HDPlus
t devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
Vdc
Gate−to−Source Voltage
VGS
"14
Vdc
Drain Current
Continuous
ID
Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
1.3
2.3
W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
3.0
95
54
°C/W
Single Pulse Drain−to−Source Avalanche
Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 2.6 Apk, L = 120 mH, RG = 25 W)
EAS
400
mJ
Operating and Storage Temperature Range
(Note 3)
TJ, Tstg
−55 to
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
Device
Package
Shipping
ORDERING INFORMATION
NID5003NT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
MPWR
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
D5003N = Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Device
Current
Limit
Current
Sense
RG
Overvoltage
Protection
ESD Protection
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
YWW
D
5003NG
*Max current may be limited below this value
depending on input conditions.
1 = Gate
2 = Drain
3 = Source
1
2
3
VDSS
(Clamped)
RDS(on) TYP
ID MAX
(Limited)
42 V
42 mW @ 10 V
20 A*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
NID5003NT4G
DPAK
(Pb−Free)
2500/Tape & Reel


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