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NID5003NT4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NID5003NT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2008 September, 2008− Rev. 6 1 Publication Order Number: NID5003N/D NID5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N−Channel, DPAK HDPlus t devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features • Short Circuit Protection/Current Limit • Thermal Shutdown with Automatic Restart • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Slew Rate Control for Low Noise Switching • Overvoltage Clamped Protection MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc Gate−to−Source Voltage VGS "14 Vdc Drain Current Continuous ID Internally Limited Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD 1.3 2.3 W Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJC RqJA RqJA 3.0 95 54 °C/W Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 2.6 Apk, L = 120 mH, RG = 25 W) EAS 400 mJ Operating and Storage Temperature Range (Note 3) TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu. 2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu. 3. Normal pre−fault operating range. See thermal limit range conditions. Device Package Shipping† ORDERING INFORMATION NID5003NT4 DPAK 2500/Tape & Reel DPAK CASE 369C STYLE 2 MPWR Drain Source Temperature Limit Gate Input MARKING DIAGRAM D5003N = Device Code Y = Year WW = Work Week G = Pb−Free Device Current Limit Current Sense RG Overvoltage Protection ESD Protection Preferred devices are recommended choices for future use and best overall value. http://onsemi.com YWW D 5003NG *Max current may be limited below this value depending on input conditions. 1 = Gate 2 = Drain 3 = Source 1 2 3 VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 42 mW @ 10 V 20 A* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com NID5003NT4G DPAK (Pb−Free) 2500/Tape & Reel |
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