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CAT93C66HU4I-GT3 Datasheet(PDF) 2 Page - ON Semiconductor

Part # CAT93C66HU4I-GT3
Description  4 kb Microwire Serial CMOS EEPROM Self?뭪imed Write Cycle with Auto?뭖lear
Download  16 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT93C66HU4I-GT3 Datasheet(HTML) 2 Page - ON Semiconductor

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CAT93C66, CAT93W66
http://onsemi.com
2
Table 1. PIN FUNCTION
Pin Name
Function
Pin Name
Function
CS
Chip Select
VCC
Power Supply
SK
Clock Input
GND
Ground
DI
Serial Data Input
ORG (Note 1)
Memory Organization
DO
Serial Data Output
NC
No Connection
1. ORG Pin available for the CAT93C66 only.
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
−65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 2)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 3. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
Parameter
Min
Units
NEND (Note 4)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
3. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
4. Block Mode, VCC = 5 V, 25°C.
Table 4. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT
(VCC = +1.8 V to +5.5 V, TA = −40°C to +125°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Power Supply Current
(Write)
fSK = 1 MHz, VCC = 5.0 V
1
mA
ICC2
Power Supply Current
(Read)
fSK = 1 MHz, VCC = 5.0 V
500
mA
ISB1
Power Supply Current
(Standby) (x8 Mode)
VIN = GND or VCC,
CS = GND ORG = GND
TA = −40°C to +85°C
2
mA
TA = −40°C to +125°C
4
ISB2
Power Supply Current
(Standby) (x16 Mode)
VIN = GND or VCC, CS = GND
ORG = Float or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
ILI
Input Leakage Current
VIN = GND to VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
ILO
Output Leakage Current
VOUT = GND to VCC,
CS = GND
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
VIL1
Input Low Voltage
4.5 V ≤ VCC < 5.5 V
−0.1
0.8
V
VIH1
Input High Voltage
4.5 V ≤ VCC < 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8 V ≤ VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8 V ≤ VCC < 4.5 V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5 V ≤ VCC < 5.5 V, IOL = 2.1 mA
0.4
V
VOH1
Output High Voltage
4.5 V ≤ VCC < 5.5 V, IOH = −400 mA
2.4
V
VOL2
Output Low Voltage
1.8 V ≤ VCC < 4.5 V, IOL = 1 mA
0.2
V
VOH2
Output High Voltage
1.8 V ≤ VCC < 4.5 V, IOH = −100 mA
VCC − 0.2
V


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