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EQ-433L Datasheet(PDF) 2 Page - Asahi Kasei Microsystems

Part # EQ-433L
Description  EQ-433L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
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Manufacturer  AKM [Asahi Kasei Microsystems]
Direct Link  http://www.akm.com
Logo AKM - Asahi Kasei Microsystems

EQ-433L Datasheet(HTML) 2 Page - Asahi Kasei Microsystems

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EQ-433L
●Electric characteristics(TA=25℃, VCC=5V)
●Magnetic characteristics(TA=25℃, VCC=5V)
※1mT = 10Gauss
※1mT = 10Gauss
Parameter
Conditions
min
Unit
Symbol
VCC−0.3
0
9
90
2
4
0.3
2
12
VCC
0.3
mA
V
V
kHz
μs
μs
μs
mVp-p
Typ
Max
Output saturation voltage at Low Level
(*1)
Bandwidth
(*2)
Response time
(*2)
Output rise time
(*2)
Output fall time
(*2)
Output noise voltage
(*2)
B=0mT with no load
IOUT=ー1mA
IOUT=1mA
ー3dB CL=1000pF
ICC
VSATH
VSATL
fT
tRES
tRISE
tFALL
tREAC
VNp-p
Output saturation voltage at High Level
(*1)
Current
consumption
(*1&2) Design target at 25℃
(*3) See Characteristic Definitions section
(*4) See Characteristic Definitions section
Rise time : 10% of Input MFD to 90% of output voltage.
Fall time: 90% of Input MFD to 10% of output voltage.
(under input/output MFD step is 1 to 2μs)
CL=1000pF
Output delay time
(*2)
Rise time : 10% of Input MFD to 10% of output voltage.
Fall time: 90% of Input MFD to 90% of output voltage.
(under input/output MFD step is 1 to 2μs)
CL=1000pF
10% to 90% of output voltage under
input/output MFD step is 1 to 2μs.
CL=1000pF
90% to 10% of output voltage under
input/output MFD step is 1 to 2μs
CL=1000pF
●Ratio-metric characteristics(TA=25℃)
※1mT = 10Gauss
(*5) See Characteristic Definitions section
Parameter
Symbol
Conditions
min Typ Max Unit
Sensitivity(*3)
Quiescent voltage
Linearity (*4)
Vh
VOUT0
ρ
B=0、±41mT with no load
B=0mT
B=0mT (IOUT=0mA)
B=±50mT (IOUT=±1mA)
17
2.45
−0.5
20
2.5
23
2.55
0.5
mV/mT
V
%F.S.
Parameter
Symbol
Conditions
min Typ Max Unit
Error in Ratiometric of
Magnetic sensitivity(*5)
Error in Ratiometric of
Quiescent voltage(*5)
VOUT0-R
Vh-R B=0、±41mT with no load
B=0mT
−3
−3
3
3
%
%
Input magnetic field
Rise time of magnetic field
Fall time of magnetic field
tRES
tREA
tREA
tFALL
tRES
tRISE
Output voltage
of sensor
90%
90%
10%
90%
1∼2μs
1∼2μs
10%
90%
10%
10%
●Characteristic Definitions
ρ=            ×100
Vout(+B)
ーVout(ーB)
Vout(B)
{Vh×B+Vint
①Magnetic sensitivity Vh (mV/mT)
Magnetic sensitivity is defined as the slope of the straight line
obtained from three points, Quiescent voltage VOUT0、VOUT
(+B)、VOUT (−B) (B is described in measurement condition),
by the least square approximation.
②Linearityρ (%F.S.)
Linearity is defined as the ratio of a error voltage against
FULLSCALE. Where error voltage is calculate as the
difference from the straight line obtained from three points,
Quiescent voltage VOUT0、VOUT (+B)、VOUT (−B) (B and
Output current are described in measurement condition
shown below), by the least square approximation.
〈Condition〉
:0mT applied、IOUT = 0mA
+BmT applied : IOUT=+1.0mA(Draw out from output)
−BmT applied : IOUT=−1.0mA(Draw in to output)
Where FULLSCALE(F.S.) is defied as VOUT (+B)、VOUT (−B),
Vint is y-intercepts of the line obtained in the Definition of
Magnetic sensitivity.
③Error in Ratiometric of Magnetic sensitivity and Error in
Ratiometric of quiescent voltage
Error in ratiometric is defined as the ratio of the variation of
sensitivity and quiescent voltage at 3V and 5V as following
equations..
④Response time tRES (μs)
Response time is defined as the time from the 90% reach
point of input magnetic field rise up to the 90% reach point of
output voltage rise up
⑤Output rise time, Output fall time  tRISE、tFALL(μs)
 Output rise up time is defined as the time from the 10% point
to the 90% point of output voltage under a pulse like
magnetic field input shown below.
Output fall down time is defined as the time from the 90%
point to the 10% point of output voltage under a pulse like
magnetic field input shown below.
⑥Output delay time tREAC(μs)
Output delay time is defined as the time from the 10% point
in rise up(90% point in fall down) of input magnetic field to
the 10% point in rise up(90% point in fall down) of output
voltage under a pulse like magnetic field input shown below..
〈Relations of the input Magnetic field and tRES、tRISE、tFALL
tREAC
VhーR=        ×100
Vh(VCC=5V) 5
3
5
3
Vh(VCC=3V)
VOUT0ーR
        ×100
VOUT0(VCC=5V) 5
3
5
3
VOUT0(VCC=3V)


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