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PMPB20EN Datasheet(PDF) 8 Page - NXP Semiconductors |
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PMPB20EN Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 16 May 2012 8 of 15 NXP Semiconductors PMPB20EN 30 V N-channel Trench MOSFET VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values VGS (V) 04 3 12 017aaa548 10 20 30 ID (A) 0 Tj = 25 °C Tj = 150 °C Tj (°C) -60 180 120 060 017aaa549 1.0 1.4 1.8 a 0.6 Tj (°C) -60 180 120 060 017aaa560 1.0 1.5 0.5 2.0 2.5 VGS(th) (V) 0.0 min typ max 017aaa550 VDS (V) 10-1 102 10 1 102 103 C (pF) 10 Ciss Coss Crss |
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