NXP Semiconductors

PMZB350UPE

20 V, single P-channel Trench MOSFET

PMZB350UPE

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Product data sheet

1 August 2012

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- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 2. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 3. Normalized continuous drain current as a

function of junction temperature

017aaa715

0

-10

-1

-1

-10

(A)

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

304

350

K/W

[2]

-

150

175

K/W

thermal resistance

from junction to

ambient

in free air

[3]

-

90

103

K/W