6/10/03

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© 2003 Fairchild Semiconductor Corporation

MCT5200

MCT5201

MCT5210

MCT5211

LOW INPUT CURRENT

PHOTOTRANSISTOR OPTOCOUPLERS

Description

The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting

diode, coupled with an NPN phototransistor in a six pin dual-in-line package.

The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering

current of 1.6 mA is supplied data rates to 20K bits/s are possible.

The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an

external base to emitter resistor data rates of 100K bits/s can be achieved.

Features

•

•

CTR guaranteed 0°C to 70°C

•

High common mode transient rejection 5kV/µs

•

Data rates up to 150 kbits/s (NRZ)

•

Underwriters Laboratory (UL) recognized (file #E90700)

•

VDE recognized (file #94766)

– Add option 300 (e.g., MCT5211.300)

Applications

•

CMOS to CMOS/LSTTL logic isolation

•

LSTTL to CMOS/LSTTL logic isolation

•

RS-232 line receiver

•

Telephone ring detector

•

AC line voltage sensing

•

Switching power supply

Parameters

Symbol

Device

Value

Units

TOTAL DEVICE

Storage Temperature

All

-55 to +150

°C

Operating Temperature

All

-55 to +100

°C

Lead Solder Temperature

All

260 for 10 sec

°C

Total Device Power Dissipation @ 25°C (LED plus detector)

All

260

mW

Derate Linearly From 25°C

3.5

mW/°C

EMITTER

Continuous Forward Current

All

50

mA

Reverse Input Voltage

All

6

V

Forward Current - Peak (1 µs pulse, 300 pps)

All

3.0

A

LED Power Dissipation

All

75

mW

Derate Linearly From 25°C

All

1.0

mW/°C

DETECTOR

Continuous Collector Current

All

150

mA

Detector Power Dissipation

All

150

mW

Derate Linearly from 25°C

All

2.0

mW/°C

SCHEMATIC

6

1

6

1

6

1

1

2

6

5 COL

4 EMITTER

BASE

ANODE

CATHODE

3