BCR30FM-8LB

Preliminary

R07DS0965EJ0001 Rev.0.01

Page 2 of 3

Nov 28, 2012

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

—

—

3.0

mA

Tj = 125

C, V

—

—

5.0

mA

Tj = 150

C, V

On-state voltage

—

—

1.5

V

Tc = 25

C, I

instantaneous measurement



—

—

2.0

V



—

—

2.0

V

Gate trigger voltage

Note2



—

—

2.0

V

Tj = 25

C, V



—

—

30

mA



—

—

30

mA

Gate trigger curent

Note2



—

—

30

mA

Tj = 25

C, V

Gate non-trigger voltage

0.2

—

—

V

Tj = 125

C, V

0.1

—

—

V

Tj = 150

C, V

Thermal resistance

—

—

3.0

C/W

Junction to case

Note3

(dv/dt)c

10

—

—

V/

s

Tj = 125

C

Critical-rate of rise of off-state

commutation voltage

Note4

1

—

—

V/

s

Tj = 150

C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

5. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –16 A/ms

3. Peak off-state voltage

Supply Voltage

Time

Time

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c