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BCR30FM-8LBBB0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR30FM-8LBBB0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 4 page BCR30FM-8LB Preliminary R07DS0965EJ0001 Rev.0.01 Page 2 of 3 Nov 28, 2012 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 3.0 mA Tj = 125 C, V DRM applied — — 5.0 mA Tj = 150 C, V DRM applied On-state voltage VTM — — 1.5 V Tc = 25 C, I TM = 45 A, instantaneous measurement VFGT — — 2.0 V VRGT — — 2.0 V Gate trigger voltage Note2 VRGT — — 2.0 V Tj = 25 C, V D = 6 V, RL = 6 , RG = 330 IFGT — — 30 mA IRGT — — 30 mA Gate trigger curent Note2 IRGT — — 30 mA Tj = 25 C, V D = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage VGD 0.2 — — V Tj = 125 C, V D = 1/2 VDRM 0.1 — — V Tj = 150 C, V D = 1/2 VDRM Thermal resistance Rth (j-c) — — 3.0 C/W Junction to case Note3 (dv/dt)c 10 — — V/ s Tj = 125 C Critical-rate of rise of off-state commutation voltage Note4 1 — — V/ s Tj = 150 C Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125 C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –16 A/ms 3. Peak off-state voltage VD = 400 V Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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