PBHV9115X115 datasheet(5/13 Pages) PHILIPS

Part #	PBHV9115X115

Description	150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

5 / 13 page

PBHV9115X_1

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 01 — 10 March 2010

5 of 13

NXP Semiconductors

PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base

cut-off current

VCB = −120 V;

IE =0A

--

−100

nA

VCB = −120 V;

IE =0A; Tj = 150 °C

--

−10

μA

ICES

collector-emitter

cut-off current

VCE = −120 V;

VBE =0 V

--

−100

nA

IEBO

emitter-base

cut-off current

VEB = −4V; IC =0A

-

−100

nA

hFE

DC current gain

VCE = −10 V

IC = −50 mA

100

220

-

IC = −100 mA

[1] 100

220

-

IC = −1A

[1] 10

30

-

VCEsat

collector-emitter

saturation voltage

IC = −100 mA;

IB = −10 mA

[1] -

−60

−120

mV

IC = −100 mA;

IB = −20 mA

[1] -

−50

−100

mV

IC = −500 mA;

IB = −50 mA

[1] -

−200

−300

mV

VBEsat

base-emitter

saturation voltage

IC = −1A;

IB = −100 mA

[1] -

−1

−1.2

V

td

delay time

VCC = −6V;

IC = −0.5 A;

IBon = −0.1 A;

IBoff =0.1 A

-8

-ns

tr

rise time

-

282

-

ns

ton

turn-on time

-

290

-

ns

ts

storage time

-

430

-

ns

tf

fall time

-

300

-

ns

toff

turn-off time

-

730

-

ns

fT

transition frequency

VCE = −10 V;

IC = −10 mA;

f=100MHz

-115

-MHz

Cc

collector capacitance

VCB = −20 V;

IE =ie =0A;

f=1MHz

-10

-

pF

Ce

emitter capacitance

VEB = −0.5 V;

IC =ic =0A;

f=1MHz

-

150

-

pF

Similar Part No. - PBHV9115X115

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PBHV9115X	277Kb / 14P	150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 - 10 March 2010

More results

Similar Description - PBHV9115X115

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PBHV9115Z	137Kb / 12P	150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02-9 January 2009
Nexperia B.V. All right...	PBHV9115Z	251Kb / 13P	150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 - 9 January 2009
NXP Semiconductors	PBHV9115T	124Kb / 12P	150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02-9 January 2009
Nexperia B.V. All right...	PBHV9115TLH	419Kb / 15P	150 V, 1 A PNP high-voltage low VCEsat BISS transistor
Nexperia B.V. All right...	PBHV9115X	277Kb / 14P	150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 - 10 March 2010
NXP Semiconductors	PBHV9215Z	159Kb / 12P	150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01-11 December 2009
Nexperia B.V. All right...	PBHV9215Z	273Kb / 13P	150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 - 11 December 2009
NXP Semiconductors	PBHV8115T215	113Kb / 13P	150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02-9 December 2008
	PBHV8115Z	124Kb / 12P	150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01-5 February 2008
	PBHV8115Z	126Kb / 12P	150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02-9 December 2008

More results

PBHV9115X115 Datasheet(PDF) 5 Page - NXP Semiconductors

PBHV9115X115 Datasheet(HTML) 5 Page - NXP Semiconductors

Similar Part No. - PBHV9115X115

Similar Description - PBHV9115X115

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL