 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AUIRFZ44NS Datasheet(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
AUIRFZ44NS Datasheet(HTML) 1 Page - International Rectifier |
|
|
1 / 13 page  AUIRFZ44NS AUIRFZ44NL HEXFET® Power MOSFET 08/29/11 www.irf.com 1 S D G AUTOMOTIVE GRADE l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Features Description Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ GD S Gate Drain Source V(BR)DSS 55V RDS(on) max. 17.5mΩ ID 49A D2Pak AUIRFZ44NS TO-262 AUIRFZ44NL S D G D D S G Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TC = 25°C Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally Limited) Single Pulse Avalanche Energy h EAS (tested) Single Pulse Avalanche Energy Tested Value g IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.5 RθJA Junction-to-Ambient ––– 40 mJ 530 9.4 300 (1.6mm from case ) 3.8 25 -55 to + 175 150 W °C/W 94 Max. 49 35 160 0.63 ±20 5.0 PD-96391A |
Similar Part No. - AUIRFZ44NS |
|
Similar Description - AUIRFZ44NS |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
