2

Electrical Specifications

1. Small/large signal data measured in a fully de-embedded test fixture at TA = 25 degree Celsius.

2. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance

may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching.

3. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain.

Parameter

Min

Typ.

Max

Unit

Small-signal Gain, Gain

15.5

17.5

19.5

dB

Noise Figure, NF

5.1

7.0

dB

Output Power at 1dB Gain Compression, P1dB

14.8

dBm

Third Order Intercept Point, OIP3

22.5

dBm

Input Return Loss, RLin

11.5

dB

Output Return Loss, RLout

11.6

dB

Reverse Isolation, Isolation

-43.0

dB

Table 2. Recommended Operating Range

Description

Min.

Typical

Max.

Unit

Drain Supply Voltage, Vd

5

V

Drain Supply Current, Id

70

95

130

mA

Notes:

1. Ambient operation temperature TA = 25°C unless otherwise noted.

2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.

Table 3. Thermal Properties

Parameter

Test Conditions

Value

Thermal Resistance,

Note: Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Description

Min.

Max.

Unit

Comments

Drain Supply Voltage, Vd

7.5

V

Total Drain Current, Id

135

mA

RF Input Power, Pin

20

dBm

CW

Power Dissipation, Pd

1.0

W

Channel Temperature, Tch

+150

°C

Storage Temperature, Tstg

-65

+150

°C

Maximum Assembly Temperature, Tmax

+260

°C

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, Pd

and Pin were determined at an ambient temperature of 25°C unless noted otherwise.