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AMMP-5620-TR2G Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMP-5620-TR2G Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
2 / 7 page 2 Electrical Specifications 1. Small/large signal data measured in a fully de-embedded test fixture at TA = 25 degree Celsius. 2. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching. 3. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain. Table 1. RF Electrical Characteristics (TA=25°C, Freq=18GHz, Vd=5.0V, Idq=95mA) Parameter Min Typ. Max Unit Small-signal Gain, Gain 15.5 17.5 19.5 dB Noise Figure, NF 5.1 7.0 dB Output Power at 1dB Gain Compression, P1dB 14.8 dBm Third Order Intercept Point, OIP3 22.5 dBm Input Return Loss, RLin 11.5 dB Output Return Loss, RLout 11.6 dB Reverse Isolation, Isolation -43.0 dB Table 2. Recommended Operating Range Description Min. Typical Max. Unit Drain Supply Voltage, Vd 5 V Drain Supply Current, Id 70 95 130 mA Notes: 1. Ambient operation temperature TA = 25°C unless otherwise noted. 2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method. Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, θjc θjc = 28 °C/W Note: Channel-to-board Thermal Resistance is measured using Infrared Microscopy method. Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Min. Max. Unit Comments Drain Supply Voltage, Vd 7.5 V Total Drain Current, Id 135 mA RF Input Power, Pin 20 dBm CW Power Dissipation, Pd 1.0 W Channel Temperature, Tch +150 °C Storage Temperature, Tstg -65 +150 °C Maximum Assembly Temperature, Tmax +260 °C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, Pd and Pin were determined at an ambient temperature of 25°C unless noted otherwise. |
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