R07DS0283EJ0700 Rev.7.00

Page 1 of 10

Mar 28, 2011

BB502C

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

• Built in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.6 dB typ. at f = 900 MHz

• High gain; PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

Notes:

1.

Marking is “BS–”.

2.

BB502C is individual type number of RENESAS BBFET.

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

6

V

Gate1 to source voltage

+6

−0

V

Gate2 to source voltage

+6

−0

V

Drain current

20

mA

Channel power dissipation

Pch

100

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

R07DS0283EJ0700

(Previous: REJ03G0832-0600)

Rev.7.00

Mar 28, 2011