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E-GSM900 Datasheet(PDF) 8 Page - Silicon Laboratories

Part No. E-GSM900
Description  Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including
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Maker  SILABS [Silicon Laboratories]
Homepage  http://www.silabs.com
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 8 page
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Aero I
8
Rev. 1.0
Table 5. Receiver Characteristics
(VDD = 2.7 to 3.0 V, TA = –20 to 85 Β°C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
GSM Input Frequency1
fIN
GSM 850 band
869
β€”
894
MHz
E-GSM 900 band
925
β€”
960
MHz
DCS or PCS Input Frequency1
DCS 1800 band
1805
β€”
1880
MHz
PCS 1900 band
1930
β€”
1990
MHz
Noise Figure at 25 Β°C2,3
NF25
GSM 850 band
β€”
2.9
3.8
dB
E-GSM 900 band
β€”
3.0
3.9
dB
DCS 1800 band
β€”
3.3
4.1
dB
PCS 1900 band
β€”
3.7
4.5
dB
Noise Figure at 75 Β°C2,3
NF75
GSM 850 band
β€”
3.6
4.5
dB
E-GSM 900 band
β€”
3.7
4.6
dB
DCS 1800 band
β€”
4.2
5.0
dB
PCS 1900 band
β€”
4.9
5.7
dB
Noise Figure at 85 Β°C2,3
NF85
GSM 850 band
β€”
3.7
4.6
dB
E-GSM 900 band
β€”
3.8
4.7
dB
DCS 1800 band
β€”
4.6
5.4
dB
PCS 1900 band
β€”
5.2
6.0
dB
3 MHz Input Desensitization2,3,4
DES3
GSM input
–25
–21
β€”
dBm
DCS/PCS inputs
–28
–25
β€”
dBm
20 MHz Input Desensitization2,3,4
DES20
GSM input
–21
–16
β€”
dBm
DCS/PCS inputs
–19
–15
β€”
dBm
Input IP22
IP2
|f1,2 – f0| β‰₯ 6MHz,
|f2 – f1| = 100 kHz
29
40
β€”
dBm
Input IP32
IP3
|f2 – f1| β‰₯ 800 kHz,
f0 = 2f1 – f2
–18
–12
β€”
dBm
Image Rejection2,4
IR
GSM Input
28
35
β€”
dB
DCS/PCS Inputs
28
40
β€”
dB
1 dB Input Compression2,5
CPMAX
GSM Input
–28
–23
β€”
dBm
DCS/PCS inputs
–27
–22
β€”
dBm
1 dB Input Compression2,6
CPMIN
GSM Input
–23
–18
β€”
dBm
DCS/PCS inputs
–23
–18
β€”
dBm
Minimum Voltage Gain2,6,7
GMIN
GSM input
3
8.5
12.5
dB
DCS/PCS inputs
10
15.5
19.5
dB
Maximum Voltage Gain2,7
GMAX
GSM input
100
104
109
dB
DCS/PCS inputs
96
102
107
dB
LNA Voltage Gain3,8
GLNA
GSM input
β€”
17
β€”
dB
DCS/PCS inputs
β€”
15
β€”
dB
LNA Gain Control Range
βˆ†GLNA
GSM input
13
17
21
dB
DCS/PCS inputs
4
8
12
dB




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