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E-GSM900 Datasheet(PDF) 4 Page - Silicon Laboratories

Part No. E-GSM900
Description  Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including
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Maker  SILABS [Silicon Laboratories]
Homepage  http://www.silabs.com
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Aero I
4
Rev. 1.0
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Temperature
TA
–20
2585°C
DC Supply Voltage
VDD
2.7
2.85
3.0
V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 2.85 V and an operating temperature of 25 °C unless otherwise stated. Parameters are tested in
production unless otherwise stated.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
DC Supply Voltage
VDD
–0.5 to 3.3
V
Input Current3
IIN
±10
mA
Input Voltage3
VIN
–0.3 to (VDD + 0.3)
V
Operating Temperature Range
TOP
–40 to 95
°C
Storage Temperature Range
TSTG
–55 to 150
°C
RF Input Level4
10
dBm
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. The Si4205 device is high-performance RF integrated circuit with an ESD rating of < 2 kV. Handling and
assembly of this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDI, SEN, PDN, XEN, and XIN.
4. At SAW filter output for all bands.




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