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SI8605AD-B-IS Datasheet(PDF) 6 Page - Silicon Laboratories |
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SI8605AD-B-IS Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 40 page 6 Rev. 1.2 Si860x Timing Specifications (Measured at 1.40 V Unless Otherwise Specified) Maximum I2C Bus Frequency Fmax — — 1.7 MHz Propagation Delay 5 V Operation Side A to Side B Rising4 Side A to Side B Falling4 Side B to Side A Rising Side B to Side A Falling 3.3 V Operation Side A to Side B Rising4 Side A to Side B Falling4 Side B to Side A Rising Side B to Side A Falling Tphab Tplab Tphba Tplba Tphab Tplab Tphba Tplba No bus capacitance, R1 = 1400, R2 = 499, See Figure 2 R1 = 806 R2 = 499 — — — — — — — — 38 15 33 11 44 17 30 14 45 26 46 22 55 29 40 27 ns ns ns ns ns ns ns ns Pulse Width Distortion 5V Side A Low to Side B Low4 Side B Low to Side A Low 3.3 V Side A Low to Side B Low4 Side B Low to Side A Low PWDAB PWDBA PWDAB PWDBA No bus capacitance, R1 = 1400, R2 = 499, See Figure 2 R1 = 806, R2 = 499 — — — — 22 21 27 15 32 32 35 25 ns ns ns ns Table 3. Si8600/02/05/06 Electrical Characteristics for Bidirectional I2C Channels1 (Continued) 3.0 V < VDD < 5.5 V. TA = –40 to +125 °C. Typical specs at 25 °C unless otherwise noted. Parameter Symbol Test Condition Min Typ Max Unit Notes: 1. All voltages are relative to respective ground. 2. VIL < 0.410 V, VIH > 0.540 V. 3. I2C V (Side A) = I2CV OL (Side A) – I 2CV T (Side A). To ensure no latch-up on a given bus, I 2C V (Side A) is the minimum difference between the output logic low level of the driving device and the input logic threshold. 4. Side A measured at 0.6 V. |
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