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C2.5X6.3MM-RAD Datasheet(PDF) 4 Page - Silicon Laboratories

Part # C2.5X6.3MM-RAD
Description  Low-power sleep mode On-hook transmission Loop or ground start operation Smooth polarity reversal
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

C2.5X6.3MM-RAD Datasheet(HTML) 4 Page - Silicon Laboratories

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Si3226/7
Si3208/9
4
Preliminary Rev. 0.33
1. Electrical Specifications
Table 1. Absolute Maximum Ratings and Thermal Information1
Parameter
Symbol
Test Condition
Value
Unit
Operating Temperature Range
TA
–40 to 85
°C
Storage Temperature Range
TSTG
–55 to 150
°C
Thermal Resistance, Typical2
TQFP-64
θJA
25
°C/W
Continuous Power Dissipation3
TQFP-64
PD
TA =85°C
1.6
W
Thermal Resistance, Typical2
QFN-40
θJA
32
°C/W
Continuous Power Dissipation4
QFN-40
PD
TA =85°C
1.7
W
Si3226/7
Supply Voltage
VDD1 – VDD4
–0.5 to 4.0
V
Digital Input Voltage
VIND
–0.3 to 3.6
V
Si3208
Supply Voltage
VDD
–0.5 to 4.0
V
Battery Supply Voltage5
VBAT
Continuous
+0.4 to –110
V
Pulse < 10 µs
+0.4 to –118
V
TIP, RING Current
ITIP, IRING
±100
mA
Si3209
Supply Voltage
VDD
–0.5 to 4.0
V
High Battery Supply Voltage5
VBAT
Continuous
+0.4 to –135
V
Pulse < 10 µs
+0.4 to –143
V
TIP, RING Current
ITIP, IRING
±100
mA
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet.
2. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout
guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an exposed
copper surface of at least equal size and that multiple vias are added to enable heat transfer between the top-side
copper surface and a large internal/bottom copper plane.
3. Operation of the Si3226 or Si3227 above 125 °C junction temperature may degrade device reliability.
4. Si3208 and Si3209 are equipped with on-chip thermal limiting circuitry that shuts down the circuit when the junction
temperature exceeds the thermal shutdown threshold. The thermal shutdown threshold should normally be set to 145
°C; when in the ringing state the thermal shutdown may be set to 200 °C. For optimal reliability long term operation of
the Si3208/Si3209 above 150 °C junction temperature should be avoided.
5. The dv/dt of the voltage applied to the VBAT pins must be limited to 10 V/µs.


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