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C2.5X6.3MM-RAD Datasheet(PDF) 4 Page - Silicon Laboratories |
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C2.5X6.3MM-RAD Datasheet(HTML) 4 Page - Silicon Laboratories |
4 / 38 page Si3226/7 Si3208/9 4 Preliminary Rev. 0.33 1. Electrical Specifications Table 1. Absolute Maximum Ratings and Thermal Information1 Parameter Symbol Test Condition Value Unit Operating Temperature Range TA –40 to 85 °C Storage Temperature Range TSTG –55 to 150 °C Thermal Resistance, Typical2 TQFP-64 θJA 25 °C/W Continuous Power Dissipation3 TQFP-64 PD TA =85°C 1.6 W Thermal Resistance, Typical2 QFN-40 θJA 32 °C/W Continuous Power Dissipation4 QFN-40 PD TA =85°C 1.7 W Si3226/7 Supply Voltage VDD1 – VDD4 –0.5 to 4.0 V Digital Input Voltage VIND –0.3 to 3.6 V Si3208 Supply Voltage VDD –0.5 to 4.0 V Battery Supply Voltage5 VBAT Continuous +0.4 to –110 V Pulse < 10 µs +0.4 to –118 V TIP, RING Current ITIP, IRING ±100 mA Si3209 Supply Voltage VDD –0.5 to 4.0 V High Battery Supply Voltage5 VBAT Continuous +0.4 to –135 V Pulse < 10 µs +0.4 to –143 V TIP, RING Current ITIP, IRING ±100 mA Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. 2. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an exposed copper surface of at least equal size and that multiple vias are added to enable heat transfer between the top-side copper surface and a large internal/bottom copper plane. 3. Operation of the Si3226 or Si3227 above 125 °C junction temperature may degrade device reliability. 4. Si3208 and Si3209 are equipped with on-chip thermal limiting circuitry that shuts down the circuit when the junction temperature exceeds the thermal shutdown threshold. The thermal shutdown threshold should normally be set to 145 °C; when in the ringing state the thermal shutdown may be set to 200 °C. For optimal reliability long term operation of the Si3208/Si3209 above 150 °C junction temperature should be avoided. 5. The dv/dt of the voltage applied to the VBAT pins must be limited to 10 V/µs. |
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