DISCRETE POWER AND SIGNAL

TECHNOLOGIES

Sym

Parameter

Value

Units

Storage Temperature

-55 to +150

Operating Junction Temperature

-55 to +150

350

W

2.8

Thermal Resistance Junction-to-Ambient

357

Working Inverse Voltage

75

V

Average Rectified Current

200

mA

600

mA

700

mA

1.0

Amp

Pulse Width = 1.0 microsecond

2.0

Amp

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

MMBD4448

Electrical Characteristics

SYM

CHARACTERISTICS

MIN

MAX

UNITS

TEST CONDITIONS

B

V

Breakdown Voltage

100

V

I

R

= 100 uA

75

V

I

R

=

5.0 uA

I

R

Reverse Leakage

25

nA

V

R

=

20 V

50

uA

V

R

=

20 V T

5.0

uA

V

R

=

75 V

V

F

Forward Voltage

620

720

mV

I

F

=

5 mA

1.0

V

I

F

= 100 mA

C

T

Capacitance

2.0

pF

V

R

=

0.0 V, f = 1.0 MHz

T

RR

Reverse Recovery Time

4.0

ns

I

F

= 10 mA I

I

RR

= 1.0 Ma, R

V

2.5

V

I

F

= 50 mA Pk Square Wave

High Conductance

Fast Diode

© 1997 Fairchild Semiconductor Corporation

Features:

• 350 milliwatt Power Dissipation package.

• High Breakdown Voltage, Fast Switching Speed.

• Typical capacitance less than 1.5 picofarad.

Ordering:

• 7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.

General Description:

The high breakdown voltage, fast switching speed and high

forward conductance of this diode packaged in a SOT-23

Surface Mount package makes it desirable also as a general

purpose diode.

Top Mark: RAB

3

1

2

PACKAGE

TO-236AB (Low)

3

2 NC

1

CONNECTION DIAGRAMS

Revision A; November 10, 1998