PBSS4112PANP datasheet(1/21 Pages) NXP

Part #	PBSS4112PANP

Description	120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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PBSS4112PANP

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

29 November 2012

Product data sheet

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1. Product profile

1.1 General description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.

1.2 Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High efficiency due to less heat generation

• AEC-Q101 qualified

1.3 Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCEO

collector-emitter

voltage

open base

-

120

V

IC

collector current

-

1

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

1.5

A

TR1 (NPN)

RCEsat

collector-emitter

saturation resistance

IC = 500 mA; IB = 50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

240

mΩ

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PBSS4112PANP Datasheet(PDF) 1 Page - NXP Semiconductors

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