NXP Semiconductors

PBSS5230PAP

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

PBSS5230PAP

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2013. All rights reserved

Product data sheet

11 January 2013

6 / 17

006aad167

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aad168

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

4-layer PCB 35 µm, standard footprint

Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values