2

.34

.36

.38

.4

.42

.44

.46

.48

45

46

47

48

49

50

29.5

30

30.5

31

31.5

32

32.5

33

42

44

46

48

50

52

54

56

58

60

12

13

14

15

CPK = 1.09

Std Dev = 20.3

CPK = 2.71

Std Dev = 0.395

CPK = 3.31

Std Dev = 0.147

Std Dev = 2.15

CPK = 2.55

Std Dev = 0.02

Symbol

Parameter

Units

Absolute Max.

Device Voltage, RF output to ground

V

5.5

Device Drain Current

mA

750

Control Voltage

V

5.5

CW RF Input Power (Vdd=5.0, Vctrl=5V)

dBm

25

W

4.125

Junction Temperature

150

Storage Temperature

-65 to 150

(Vdd = 5V, Idd = 400mA, Tc = 85 °C)

Notes:

2. Operation of this device in excess of any of

these limits may cause permanent damage.

3. Thermal resistance measured using Infra-Red

measurement technique.

4. This is limited by maximum Vdd and Ids.

Figure 1. Ids; LSL = 340mA, nominal = 413mA, USL = 480mA

Figure 2. OIP3; LSL = 44.5dBm, nominal = 47.7dBm

Figure 3. P1dB; LSL = 30dBm, nominal = 31dBm

Figure 4. PAE at P1dB; nominal = 51.5%

Figure 5. Gain; LSL=11.7dB, Nominal = 13.2dB, USL=14.8dB

Notes:

5. Distribution data sample size is 500 samples taken from 3 different

unless otherwise specified. Future wafers allocated to this product

may have nominal values anywhere between the upper and lower

limits.

6. Measurements are made on a production test board. Input trace

losses have not been de-embedded from actual measurements.