MGA-635P8

Ultra Low Noise, High Linearity Low Noise Amplifier

Data Sheet

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 50 V (Class A)

ESD Human Body Model = 500 V (Class 1B)

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Description

Avago Technologies’ MGA-635P8 is an economical, easy-

to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has

low noise and high linearity achieved through the use of

Avago Technologies’ proprietary 0.25

m GaAs Enhance-

ment-mode pHEMT process. It is housed in a miniature 2.0

It is designed for optimum use from 2.3GHz up to 4GHz.

The compact footprint and low profile coupled with low

noise, high gain and high linearity make the MGA-635P8

an ideal choice as a low noise amplifier for cellular infra-

structure for LTE, GSM and CDMA. For optimum perfor-

mance at lower frequency from 450MHz up to 1.5GHz,

MGA-633P8 is recommended. For optimum performance

at frequency from 1.5GHz up to 2.3GHz, MGA-634P8

is recommended. All these 3 products, MGA-633P8,

MGA-634P8 and MGA-635P8 share the same package and

pinout configuration.

Pin Configuration and Package Marking

Features

 Ultra Low noise Figure

 High linearity performance

 Excellent uniformity in product specifications

 Tape-and-Reel packaging option available

Specifications

2.5GHz; 5V, 56mA

 18 dB Gain

 0.56 dB Noise Figure

 12.5 dB Input Return Loss

 35.9 dBm Output IP3

 22 dBm Output Power at 1dB gain compression

Applications

 Low noise amplifier for cellular infrastructure for LTE,

GSM and CDMA.

 Other ultra low noise application.

Simplified Schematic

Pin 1 – Vbias

Pin 5 – Not Used

Pin 2 – RFinput

Pin 6 – Not Used

Pin 3 – Not Used

Pin 7 – RFoutput/Vdd

Pin 4 – Not Used

Pin 8 – Not Used

Centre tab - Ground

Top View

Bottom View

[2]

[1]

[3]

[4]

[7]

[8]

[6]

[5]

35X

[2]

[1]

[3]

[4]

[7]

[8]

[6]

[5]

L1

L2

C3

C1

C2

C4

R2

RFin

RFout

Vdd

[2]

[1]

[3]

[4]

[7]

[8]

[6]

[5]

C6

Rbias

R1

bias

C5

Notes:

 The schematic is shown with the assumption that similar PCB is used

for all MGA-633P8, MGA-634P8 and MGA-635P8.

 Detail of the components needed for this product is shown in Table 1.

 Enhancement mode technology employs positive gate voltage,

thereby eliminating the need of negative gate voltage associated

with conventional depletion mode devices.

 Good RF practice requires all unused pins to be earthed.

Note:

Package marking provides orientation and identification

“35” = Device Code, where X is the month code.