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TC58FVM6B2ATG-65 Datasheet(PDF) 7 Page - Toshiba Semiconductor

Part # TC58FVM6B2ATG-65
Description  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC58FVM6B2ATG-65 Datasheet(HTML) 7 Page - Toshiba Semiconductor

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TC58FVM6(T/B)2A(FT/XB)65
2003-06-30 7/62
SIMULTANEOUS READ/WRITE OPERATION
The TC58FVM6T2A/B2A features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation
enables the device to simultaneously write data to or erase data from a bank while reading data from another bank.
The TC58FVM6T2A/B2A has a total of four banks (8Mbits: 24Mbits: 24Mbits: 8Mbits). Banks can be switched
between using the bank addresses (A21~A19). For a description of bank blocks and addresses, please refer to the
Block Address Table and Block Size Table.
The Simultaneous Read/Write operation cannot perform multiple operations within a single bank. The table
below shows the operation modes in which simultaneous operation can be performed.
Note that during Auto-Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation
cannot read data from addresses in the same bank which have not been selected for operation. Data from these
addresses can be read using the Program Suspend or Erase Suspend function, however.
SIMULTANEOUS READ/WRITE OPERATION
STATUS OF BANK ON WHICH OPERATION IS BEING
PERFORMED
STATUS OF OTHER BANKS
Read Mode
ID Read Mode
(1)
Auto-Program Mode
Auto-Page Program Mode
Fast Program Mode
(2)
Program Suspend Mode
Auto Block Erase Mode
Auto Multiple Block Erase Mode
(3)
Erase Suspend Mode
Program during Erase Suspend
Program Suspend during Erase Suspend
CFI Mode
Read Mode
(1) Only Command Mode is valid.
(2) Including times when Acceleration Mode is in use.
(3) If the selected blocks are spread across all nine banks, simultaneous operation cannot be carried out.
OPERATION MODES
In addition to the Read, Write and Erase Modes, the TC58FVM6T2A/B2A features many functions including
block protection and data polling. When incorporating the device into a deign, please refer to the timing charts and
flowcharts in combination with the description below.
READ MODE (PAGE READ)
To read data from the memory cell array, set the device to Read Mode. In the Read Mode, the device can
perform high-speed random access and Page Read as an asynchronous ROM. The page size of the device is 8
word or 16 byte, with the appropriate page address being selected by address of A0-A2 (and A-1 in byte mode).
The device is automatically set to Read Mode immediately after power-on or on completion of automatic
operation. A software reset releases ID Read Mode and the lock state which the device enters if an automatic
operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the
device and resets it to Read Mode. When reading data without changing the address immediately after
power-on, either input a hardware Reset or change CE from H to L.


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