NTLUS3A40PZTAG datasheet(3/6 Pages) ONSEMI

Part #	NTLUS3A40PZTAG

Description	Power MOSFET 20 V, 9.4Cool Single P Channel ESD 2.0x2.0x0.55 mm UDFNPackage

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NTLUS3A40PZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

4.0

3.5

3.0

2.0

1.5

1.0

0.5

0

2

4

6

10

14

18

20

2.5

3.0

2.0

1.5

1.0

0.5

0

2

4

8

10

12

18

20

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

4.0

3.5

4.5

3.0

2.5

2.0

1.5

1.0

0.00

0.02

0.04

0.06

0.08

0.12

0.14

0.16

16

14

12

8

6

4

2

0

0.020

0.030

0.040

0.060

0.070

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.6

20

14

10

6

2

100

1000

10,000

100,000

2.5

4.5

8

12

16

VGS = −4.5 V

−4.0 V

−3.5 V

−3.0 V

−2.5 V

−2.0 V

−1.8 V

−1.6 V

VDS ≤ −10 V

6

14

16

TJ = 25°C

TJ = −55°C

TJ = 125°C

0.10

ID = −4.0 A

TJ = 25°C

10

18

20

0.050

−1.5 V

TJ = 25°C

−1.8 V

−2.5 V

VGS = −4.5 V

ID = −4.0 A

150

1.0

1.5

TJ = 85°C

TJ = 125°C

0.18

0.20

0.080

18

12

8

416

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