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TPS5130PTR Datasheet(PDF) 11 Page - Texas Instruments |
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TPS5130PTR Datasheet(HTML) 11 Page - Texas Instruments |
11 / 31 page TPS5130 SLVS426 − MAY 2002 www.ti.com 11 OVER CURRENT PROTECTION Over current protection (OCP) is achieved by comparing the drain-to-source voltage of the high-side and low-side MOSFET to a set-point voltage, which is defined by both the internal current source, I(TRIP), and the external resistor connected between the VIN_SENSEx and the TRIPx pins. I(TRIP) has a typical value of 13 µA at 25°C. When the drain-to-source voltage exceeds the set-point voltage during low-side conduction, the high-side current comparator becomes active, and the low-side pulse is extended until this voltage comes back below the threshold. If the set-point voltage is exceeded during high-side conduction in the following cycle, the current limit circuit terminates the high-side driver pulse. Together this action has the effect of decreasing the output voltage until the under voltage protection circuit is activated to latch both the high-side and low-side drivers OFF. In the TPS5130, trip current I(TRIP) has a temperature coefficient of 3400 ppm/°C in order to compensate for temperature drift of the MOSFET on-resistance. OCP FOR THE LDO To achieve the LDO current limit, a sense resistor must be placed in series with the N-channel MOSFET drain, connected between the LDO_IN and LDO_CUR pins (see reference schematic). If the voltage drop across this sense resistor exceeds 50 mV, the output voltage is reduced to approximately 22% of the nominal value, thus it activates the UVP to start the FLT latch timer. When the time is up, the LDO_GATE pin is pulled LOW to makes the LDO regulator shut down. Note that all of the SBRCs are latched OFF at the same time since the LDO and the SBRCs share the same FLT capacitor. OVER VOLTAGE PROTECTION For overvoltage protection (OVP), the TPS5130 monitors the INVx and INV_LDO pin voltages. When the INVx or INV_LDO pin voltage is higher than 0.95 V (0.85 V +12%), the OVP comparator output goes low and the FLT timer starts to charge an external capacitor connected to FLT pin. After a set time, the FLT circuit latches the high-side MOSFET driver, the low-side MOSFET drivers, and the LDO. The latched state of each block is summarized in Table 2. The timer source current for the OVP latch is 125 µA(typ.), and the time-up voltage is 1.185 V (typ.). The OVP timer is designed to be 50 times faster than the under voltage protection timer described in Table 2. Table 2. OVP Logic OVP OCCURRED AT HIGH-SIDE MOSFET DRIVER LOW-SIDE MOSFET DRIVER LDO SBRC OFF ON OFF LDO OFF OFF OFF UNDER VOLTAGE PROTECTION For under voltage protection (UVP), the TPS5130 monitors the INVx and INV_LDO pin voltages. When the INVx or INV_LDO pin voltage is lower than 0.55 V (0.85 V - 35 %), the UVP comparator output goes low, and the FLT timer starts to charge the external capacitor connected to FLT pin. Also, when the current comparator triggers the OCP, the UVP comparator detects the under voltage output and starts the FLT capacitor charge, too. After a set time, the FLT circuit latches all of the MOSFET drivers to the OFF state. The timer latch source current for UVP is 2.3 µA (typ.), and the time-up voltage is also 1.185 V (typ.). The UVP function of the LDO controller is disabled when voltage across the pass transistor is less than 0.23 V (typ.). FLT When an OVP or UVP comparator output goes low, the FLT circuit starts to charge the FLT capacitor. If the FLT pin voltage goes beyond a constant level, the TPS5130 latches the MOSFET drivers. At this time, the state of MOSFET is different depending on the OVP alert and the UVP alert (see Table 2). The enable time used to latch the MOSFET drivers is decided by the value of the FLT capacitor. The charging constant current value depends on whether it is an OVP alert or a UVP alert as shown in the following equation: FLT source current (OVP) = FLT source current (UVP) × 50 |
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