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AME8863AEEY150L Datasheet(PDF) 4 Page - Analog Microelectronics |
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AME8863AEEY150L Datasheet(HTML) 4 Page - Analog Microelectronics |
4 / 12 page AME 4 600mA CMOS LDO AME8863 Rev.C.03 n Absolute Maximum Ratings Caution: Stress above the listed absolute rating may cause permanent damage to the device. * HBM B:2000V~3999V n Recommended Operating Conditions n Thermal Information * Measure θ JC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F Parameter Maximum Unit Input Voltage 7 V Output Current PD / (VIN - VO) A Output Voltage GND - 0.3 to VIN + 0.3 V ESD Classification B* Parameter Package Die Attach Symbol Maximum Unit Thermal Resistance * (Junction to Case) θ JC 81 oC / W Thermal Resistance (Junction to Ambient) θ JA 260 oC / W Internal Power Dissipation PD 400 mW Maximum Junction Temperature 150 oC Solder Iron (10 Sec)** 350 oC SOT-26 Conductive Epoxy Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC Storage Temperature Range TSTG - 65 to +150 oC |
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