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NE5550779A-T1A-A Datasheet(PDF) 8 Page - Renesas Technology Corp |
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NE5550779A-T1A-A Datasheet(HTML) 8 Page - Renesas Technology Corp |
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8 / 17 page  NE5550779A R09DS0040EJ0300 Rev.3.00 Page 8 of 15 Mar 12, 2013 TYPICAL CHARACTERISTICS 2 (TA = 25 °C) RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm add - 3.6 V add - 6 V add - 4.5 V add - 9 V add - 7.5 V Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V Input Power Pin (dBm) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 10 0.0 45 3.5 35 40 3.0 2.5 2.0 30 1.5 25 1.0 20 0.5 15 30 15 10 –5 05 20 Input Power Pin (dBm) POWER GAIN, POWER ADDED EFFICIENCY vs. INPUT POWER GP - 3.6 V GP - 4.5 V GP - 6 V GP - 7.5 V GP - 9 V 50 45 80 40 70 35 60 30 50 25 40 20 30 15 20 10 10 η η η η η 25 IDS - 3.6 V IDS - 6 V IDS - 4.5 V IDS - 9 V IDS - 7.5 V 30 15 10 –5 05 20 25 Remark The graphs indicate nominal characteristics. |
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