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NESG2101M05 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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NESG2101M05 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 15 page NESG2101M05 R09DS0036EJ0300 Rev. 3.00 Page 3 of 13 Jun 20, 2012 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) f = 1 MHz Collector to Base Voltage VCB (V) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.0 0.6 0.8 0.2 0.4 02 4 6 8 10 VCE = 1 V 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 4 V 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 700 500 600 400 200 300 100 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Polyimide PCB (38 × 38 mm, t = 0.4 mm) Remark The graph indicates nominal characteristics. |
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