NESG2101M05 datasheet(3/15 Pages) RENESAS

Part #	NESG2101M05

Description	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

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Manufacturer	RENESAS [Renesas Technology Corp]

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NESG2101M05

R09DS0036EJ0300 Rev. 3.00

Page 3 of 13

Jun 20, 2012

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

f = 1 MHz

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

1.0

0.6

0.8

0.2

0.4

02

4

6

8

10

VCE = 1 V

100

10

1

0.01

0.001

0.1

0.0001

0.7

0.5

0.6

0.4

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VCE = 3 V

100

10

1

0.01

0.001

0.1

0.0001

0.7

0.5

0.6

0.4

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VCE = 2 V

100

10

1

0.01

0.001

0.1

0.0001

0.7

0.5

0.6

0.4

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VCE = 4 V

100

10

1

0.01

0.001

0.1

0.0001

0.7

0.5

0.6

0.4

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

700

500

600

400

200

300

100

0

25

50

75

100

125

150

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Mounted on Polyimide PCB

(38

× 38 mm, t = 0.4 mm)

Remark The graph indicates nominal characteristics.

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