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NESG3032M14 Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # NESG3032M14
Description  NPN SiGe RF Transistor for Low Noise, High-Gain
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NESG3032M14 Datasheet(HTML) 7 Page - Renesas Technology Corp

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VCE = 2 V
f = 1 GHz
MSG
|S21e|
2
30
25
20
15
10
5
0
1
10
100
VCE = 2 V
f = 3 GHz
|S21e|
2
30
25
20
15
10
5
0
1
10
100
VCE = 2 V
f = 2 GHz
|S21e|
2
30
25
20
15
10
5
0
1
10
100
VCE = 3 V
f = 0.5 GHz
MSG
|S21e|
2
30
25
20
15
10
5
0
1
10
100
VCE = 3 V
f = 1 GHz
|S21e|
2
MSG
30
25
20
15
10
5
0
1
10
100
VCE = 2 V
f = 5 GHz
|S21e|
2
MAG
MSG
MAG
MSG
MAG
MSG
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
1
10
100
30
25
20
15
10
5
0
Remark The graphs indicate nominal characteristics.
NESG3032M14
R09DS0048EJ0300 Rev.3.00
Page 7 of 13
Sep 18, 2012


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