NESG3032M14-A datasheet(11/15 Pages) RENESAS

Part #	NESG3032M14-A

Description	NPN SiGe RF Transistor for Low Noise, High-Gain

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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EVALUATION CIRCUIT (f = 1.575 GHz LNA)

IN

C3

L1

OUT

C2

VCC

L2

C4

C1

R1

10 000 pF

5.6 nH

82 k

Ω

10 000 pF

R3

3.9 nH

R2

62

Ω

8.2

Ω

3 V

10 000 pF

6 pF

Microstrip

W = 0.15 mm

L = 0.5 mm

× 2

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

COMPONENT LIST

Symbol

Parts

Part Number

Maker

Value

C1, C3, C4

Chip Capacitor

GRM155B31H103KA88

Murata

10 000 pF

C2

Chip Capacitor

GRM1552C1H6R0DZ01

Murata

6 pF

L1

Chip Inductor

AML1005H5N6STS

FDK

5.6 nH

L2

Chip Inductor

AML1005H3N9STS

FDK

3.9 nH

R1

Chip Resistor

MCR01MZPJ823

ROHM

82 k

Ω

R2

Chip Resistor

MCR01MZPJ8R2

ROHM

8.2

Ω

R3

Chip Resistor

MCR01MZPJ620

ROHM

62

Ω

<R>

NESG3032M14

R09DS0048EJ0300 Rev.3.00

Page 11 of 13

Sep 18, 2012

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NESG3032M14-A Datasheet(PDF) 11 Page - Renesas Technology Corp

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