NXP Semiconductors

PBSS4230QA

30 V, 2 A NPN low VCEsat (BISS) transistor

PBSS4230QA

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Product data sheet

23 August 2013

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

30

V

collector-emitter voltage

open base

-

30

V

emitter-base voltage

open collector

-

7

V

collector current

-

2

A

peak collector current

-

3

A

base current

-

0.3

A

peak base current

-

1

A

[1]

-

325

mW

[2]

-

600

mW

[3]

-

740

mW

[4]

-

540

mW

total power dissipation

[5]

-

1000

mW

junction temperature

-

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.