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PBSS4260QA Datasheet(PDF) 10 Page - NXP Semiconductors

Part # PBSS4260QA
Description  60 V, 2 A NPN low VCEsat (BISS) transistor
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS4260QA Datasheet(HTML) 10 Page - NXP Semiconductors

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NXP Semiconductors
PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
PBSS4260QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
28 August 2013
10 / 17
aaa-008068
IC (mA)
10-1
104
103
1
102
10
10-1
1
VCEsat
(V)
10-2
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-008069
10-1
10-2
1
VCEsat
(V)
10-3
IC (mA)
10-1
104
103
1
102
10
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-008070
IC (mA)
10-1
104
103
1
102
10
1
10
102
103
RCEsat
(Ω)
10-1
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-008071
IC (mA)
10-1
104
103
1
102
10
1
10
102
103
RCEsat
(Ω)
10-1
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values


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