NXP Semiconductors

PMXB40UNE

12 V, N-channel Trench MOSFET

PMXB40UNE

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Product data sheet

27 September 2013

8 / 15

0

2

1.5

0.5

1

aaa-008990

4

6

2

8

10

(A)

0

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-008991

1

0.5

1.5

2

a

0

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

aaa-008992

0.50

0.75

0.25

1.00

1.25

(V)

0

min

typ

max

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

aaa-008993

10

1

C

(pF)

10

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values