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NTF6P02T3G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTF6P02T3G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page Publication Order Number: NTF6P02T3/D © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 6 1 NTF6P02, NVF6P02 Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 Features • Low RDS(on) • Logic Level Gate Drive • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Management in Portables and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 Vdc Gate−to−Source Voltage VGS ±8.0 Vdc Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 ms) ID ID IDM −10 −8.4 −35 Adc Apk Total Power Dissipation @ TA = 25°C PD 8.3 W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25W) EAS 150 mJ Thermal Resistance − Junction to Lead (Note 1) − Junction to Ambient (Note 2) − Junction to Ambient (Note 3) RqJL RqJA RqJA 15 71.4 160 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Steady State. 2. When surface mounted to an FR4 board using 1” pad size, (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. 1 2 3 4 −10 AMPERES −20 VOLTS RDS(on) = 44 mW (Typ.) Device Package Shipping† ORDERING INFORMATION SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM & PIN ASSIGNMENT http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. A = Assembly Location Y = Year W = Work Week 6P02 = Specific Device Code G = Pb−Free Package AYW 6P02G G 1 Gate 2 Drain 3 Source Drain 4 (Note: Microdot may be in either location) SOT−223 (Pb−Free) NTF6P02T3G 4000 / Tape & Reel G S D P−Channel MOSFET SOT−223 (Pb−Free) NVF6P02T3G* 4000 / Tape & Reel |
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