NTF6P02T3G datasheet(1/6 Pages) ONSEMI

Part #	NTF6P02T3G

Description	Power MOSFET -10 Amps, -20 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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Publication Order Number:

NTF6P02T3/D

August, 2013 − Rev. 6

1

NTF6P02, NVF6P02

Power MOSFET

-10 Amps, -20 Volts

P−Channel SOT−223

Features

• Low RDS(on)

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• NVF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Management in Portables and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

Vdc

Gate−to−Source Voltage

VGS

±8.0

Vdc

Drain Current (Note 1)

− Continuous @ TA = 25°C

− Continuous @ TA = 70°C

− Single Pulse (tp = 10 ms)

ID

IDM

−10

−8.4

−35

Adc

Apk

Total Power Dissipation @ TA = 25°C

PD

8.3

W

Operating and Storage Temperature Range

TJ, Tstg

−55 to

+150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = −20 Vdc, VGS = −5.0 Vdc,

IL(pk) = −10 A, L = 3.0 mH, RG = 25W)

EAS

150

mJ

Thermal Resistance

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

RqJL

RqJA

15

71.4

160

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1” pad size,

(Cu. Area 1.127 sq in), Steady State.

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 sq in), Steady State.

1

2

3

4

−10 AMPERES

−20 VOLTS

RDS(on) = 44 mW (Typ.)

Device

Package

Shipping†

ORDERING INFORMATION

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

& PIN ASSIGNMENT

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

A

= Assembly Location

Y

= Year

W

= Work Week

6P02

= Specific Device Code

G

= Pb−Free Package

AYW

6P02G

G

1

Gate

2

Drain

3

Source

Drain

4

(Note: Microdot may be in either location)

SOT−223

(Pb−Free)

NTF6P02T3G

4000 / Tape &

Reel

G

S

D

P−Channel MOSFET

SOT−223

(Pb−Free)

NVF6P02T3G*

4000 / Tape &

Reel

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