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BQ20Z80DBT-V110G4 Datasheet(PDF) 6 Page - Texas Instruments |
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BQ20Z80DBT-V110G4 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 25 page  www.ti.com DATA FLASH MEMORY CHARACTERISTICS REGISTER BACKUP bq20z80 bq20z80A SLUS782 – JULY 2007 VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tDR Data retention See (1) 10 Years Flash programming write-cycles See (1) 20,000 Cycles t(WORDPROG) Word programming time See (1) 2 ms I(DDPROG) Flash-write supply current See (1) 8 15 mA (1) Specified by design. Not production tested VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I(RBI) RBI data-retention input current V(RBI) > 3 V, VDD < VIT 10 100 nA V(RBI) RBI data-retention voltage(1) 1.3 V (1) Specified by design. Not production tested. 6 Submit Documentation Feedback |
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