NTMD6N02R2 datasheet(4/6 Pages) ONSEMI

Part #	NTMD6N02R2

Description	Power MOSFET 6.0 Amps, 20 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMD6N02R2

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4

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

1.6

1.4

1.2

1

0.8

150

125

100

75

50

25

0

−25

−50

Figure 6. Drain−To−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

20

16

12

8

4

100

10

0.01

0.6

1000

ID = 6.0 A

VGS = 4.5 V

TJ = 125°C

VGS = 0 V

100

°C

1

0.1

25

°C

RG, GATE RESISTANCE (OHMS)

1

10

100

10

VDS = 16 V

ID = 6.0 A

VGS = 4.5 V

tr

td(on)

20

4

0

1

0

Qg, TOTAL GATE CHARGE (nC)

5

48

16

ID = 6 A

VDS = 16 V

VGS = 4.5 V

TJ = 25°C

12

VDS

VGS

Q2

Q1

1000

tf

3

2

8

12

416

QT

td(off)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1000

Figure 7. Capacitance Variation

10

0

5

10

5

TJ = 25°C

Ciss

Coss

Crss

15

20

0

2000

Ciss

Crss

VDS = 0 V

VGS = 0 V

VDS

VGS

500

1500

2500

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

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NTMD6N02R2 Datasheet(PDF) 4 Page - ON Semiconductor

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