MTB3N120E datasheet(3/12 Pages) MOTOROLA

Part #	MTB3N120E

Description	TMOS POWER FET 3.0 AMPERES 1200 VOLTS

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Manufacturer	MOTOROLA [Motorola, Inc]

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MTB3N120E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

10,000

1,000

100

10

1

0

400

600

1000

1200

100

°C

25

°C

2.5

2.0

1.5

1.0

0.5

0

– 50

– 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 1.5 A

5.4

5.0

4.6

4.2

3.8

ID, DRAIN CURRENT (AMPS)

15 V

8

2

0

2

4

6

5

3

1

6

0

6

12

18

24

30

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 100°C

– 55

°C

TJ = 25°C

VGS = 10 V

VGS = 0 V

5

4

3

2

3

3.4

3.8

4.2

4.6

5.0

5.4

5.8

6.2

0

2

4

6

5

3

1

TJ = 125°C

1

6

4

200

25

°C

TJ = – 55°C

100

°C

25

°C

4 V

5 V

6 V

VGS = 10 V

TJ = 25°C

6

0

5

4

3

2

1

800

VGS = 10 V

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MTB3N120E Datasheet(PDF) 3 Page - Motorola, Inc

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