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MTB3N120E Datasheet(PDF) 3 Page - Motorola, Inc |
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MTB3N120E Datasheet(HTML) 3 Page - Motorola, Inc |
3 / 12 page MTB3N120E 3 Motorola TMOS Power MOSFET Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS 10,000 1,000 100 10 1 0 400 600 1000 1200 100 °C 25 °C 2.5 2.0 1.5 1.0 0.5 0 – 50 – 25 0 25 50 75 100 125 150 VGS = 10 V ID = 1.5 A 5.4 5.0 4.6 4.2 3.8 ID, DRAIN CURRENT (AMPS) 15 V 8 2 0 0 2 4 6 5 3 1 6 0 0 6 12 18 24 30 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Drain Current and Temperature Figure 4. On–Resistance versus Drain Current and Gate Voltage TJ, JUNCTION TEMPERATURE (°C) Figure 5. On–Resistance Variation with Temperature VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage VDS ≥ 10 V TJ = 100°C – 55 °C TJ = 25°C VGS = 10 V VGS = 0 V 5 4 3 2 3 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 2 4 6 5 3 1 TJ = 125°C 1 6 4 200 25 °C TJ = – 55°C 100 °C 25 °C 4 V 5 V 6 V VGS = 10 V TJ = 25°C 6 0 5 4 3 2 1 800 VGS = 10 V |
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