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SN65HVD233-HT Datasheet(PDF) 3 Page - Texas Instruments |
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SN65HVD233-HT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 32 page  a b c d Origin SN65HVD233-HT www.ti.com SLLS933F – NOVEMBER 2008 – REVISED AUGUST 2012 BARE DIE INFORMATION BACKSIDE BOND PAD DIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION 15 mils. Silicon with backgrind GND Al-Si-Cu (0.5%) Table 1. Bond Pad Coordinates in Microns - Rev A DISCRIPTION PAD NUMBER a b c d D 1 86.40 157.85 203.40 274.85 GND 2 1035.05 69.75 1150.05 184.75 GND 3 1168.15 69.75 1283.15 184.75 VCC 4 1572.05 51.85 1687.05 166.85 VCC 5 1711.95 51.85 1826.95 166.85 R 6 2758.85 237.65 2873.85 352.65 LBK 7 2774.25 1429.985 2889.25 1544.95 CANL 8 1549.90 1544.95 1664.90 1659.95 CANH 9 1351.45 1544.95 1466.45 1659.95 RS 10 83.50 1429.95 198.50 1544.95 Copyright © 2008–2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: SN65HVD233-HT |
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